Details
Ferroelectric Perovskites for High-Speed Memory
A Mechanism Revealed by Quantum Bonding Motion|
106,99 € |
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| Verlag: | Springer |
| Format: | |
| Veröffentl.: | 28.06.2022 |
| ISBN/EAN: | 9789811926693 |
| Sprache: | englisch |
Dieses eBook enthält ein Wasserzeichen.
Beschreibungen
This book is intended for theoretical and experimental researchers who are interested in ferroelectrics and advanced memory. After introducing readers to dielectric, perovskites, advanced memories, and ferroelectric, it explains quantum simulation. Then, using molecular orbital calculation results, it explains the ferroelectric mechanism in perovskite titanium oxides in concrete terms. Lastly, the book examines the materials designed for high-performance ferroelectrics and discusses the future of high-speed memory.
Part I Theoretical Background.- 1. Electromagnetism.- 2. Quantum Mechanics.- 3. Quantum Computational Chemistry.- Part II Background of Ferroelectricity.- 4. Basics of Ferroelectricity.- 5. History of Ferroelectric Perovskites.- Part III Origin of Ferroelectricity.- 6. Perovskite Titanium Oxides.- 7. Materials Design.- Part VI Summary and Outlook.- 8. Summary and Future High Speed Memory.
<div>Dr. Taku Onishi graduated from Osaka University in 1998 and received his Ph.D. from the same university in 2003. He has been working at Mie University since 2003 and has been a guest researcher at the University of Oslo since 2010. The title of invited professor was given from The University of Ryukyus in 2021.</div><div><br></div><div>His research focuses on quantum chemistry, computational chemistry, quantum physics, and material science. His book “Quantum Computational Chemistry—Modelling and Calculation for Functional Materials” was published by Springer in 2017.</div><div><br></div>He is a member of the Royal Society of Chemistry; the chair of the Computational Chemistry (CC) Symposium; a member of the science committee of the International Conference of Computational Methods in Sciences and Engineering (ICCMSE); and a member of the editorial board of Cogent Chemistry, the Journal of Computational Methods in Sciences and Engineering (JCMSE), and Cogent Engineering.<div><br></div><div>He has reviewed numerous international proceedings, books, and journals in various research fields.</div><div><br></div>
This book is intended for theoretical and experimental researchers who are interested in ferroelectrics and advanced memory. After introducing readers to dielectric, perovskites, advanced memories, and ferroelectric, it explains quantum simulation. Then, using molecular orbital calculation results, it explains the ferroelectric mechanism in perovskite titanium oxides in concrete terms. Lastly, the book examines the materials designed for high-performance ferroelectrics and discusses the future of high-speed memory.
Appeals to both theoretical and experimental researchers Helps readers to understand the origin of ferroelectricity together with the theoretical basics Uses molecular orbital calculation results to explain the ferroelectric mechanism in perovskite titanium oxides
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